RF bias sputter-deposited silicon-oxid films.

Physical Properties of Reactively Sputter-Deposited C-N Thin Films

This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...

Bias-plasma assisted RF magnetron sputter deposition of hydrogen-less amorphous silicon

The execution of special hydrogen diffusion experiments requires an initially hydrogen-free drain layer. Hydrogen-free amorphous silicon (a-Si) deposited by radio frequency magnetron sputter deposition (RFSD) serves this purpose. RFSD yields a rough surface of the film but this can be flattened by an additional post-hydrogenation step. Weak Si-Si bonds are reorganized by hydrogen and the surfac...

Metal-to-insulator transition in sputter deposited 3NiÕAl thin films

Sputter-deposited Sma Thin Films: Properties and Applications

Shape memory alloy (SMA) thin films formed by sputter deposition have attracted considerable attention in the last decade. Current intensive research demonstrated that thin films' unique fine microstructure is responsible for superior shape memory characteristics in films, compared to that of bulk materials. Simultaneously, much effort has been taken in the development and fabrication of microd...

Growth, structure and stability of sputter-deposited MoS2 thin films

Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are cru...